The effect of Te alloying on the electronic gap of a-Se
- 31 December 1982
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 44 (10) , 1431-1434
- https://doi.org/10.1016/0038-1098(82)90025-4
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- Xerographic spectroscopy of gap states in amorphous semiconductorsPhysical Review B, 1982
- Evidence for Exponential Band Tails in Amorphous Silicon HydridePhysical Review Letters, 1981
- Drift mobilities in amorphous AsSeTeJournal of Non-Crystalline Solids, 1979
- Dispersive (non-Gaussian) transient transport in disordered solidsAdvances in Physics, 1978
- Photoelectronic behavior of-Se and some-Se: As alloys in their glass transition regionsPhysical Review B, 1978
- Theory of anomalous dispersion in a-SeSolid State Communications, 1977
- Multiple-trapping model of anomalous transit-time dispersion inPhysical Review B, 1977
- Dispersive Low-Temperature Transport in-SeleniumPhysical Review Letters, 1976
- Anomalous transit-time dispersion in amorphous solidsPhysical Review B, 1975
- The effects of valency on transport properties in vitreous binary alloys of seleniumJournal of Non-Crystalline Solids, 1970