Electron-electron scattering in narrow Si accumulation layers
- 22 May 1989
- journal article
- letter
- Published by IOP Publishing in Journal of Physics: Condensed Matter
- Vol. 1 (20) , 3289-3293
- https://doi.org/10.1088/0953-8984/1/20/010
Abstract
The authors report on measurements of the phase coherence time, tau phi , as determined from the measurement of weak negative magnetoresistance in narrow pinched Si accumulation layers. Under favourable bias conditions, one-dimensional quantum interference and electron interaction corrections to the conductivity are found. The phase coherence length is then best described in terms of the 1D Nyquist phase-breaking mechanism, with a Landau-Baber (pure metal limit) component which retains its 2D form.Keywords
This publication has 14 references indexed in Scilit:
- Localization and electron-electron interaction effects in thin Bi wires and filmsPhysical Review B, 1988
- Nonlocal Potential Measurements of Quantum ConductorsPhysical Review Letters, 1987
- Inelastic electron scattering in pseudo-one-dimensional metal wiresJournal of Physics C: Solid State Physics, 1987
- Localization and electron-electron interaction effects in thin Au-Pd films and wiresPhysical Review B, 1987
- Quasi One-Dimensional Conduction in Multiple, Parallel Inversion LinesPhysical Review Letters, 1986
- Hopping conduction in quasi-one-dimensional systemsSurface Science, 1986
- One-Dimensional Conduction in the 2D Electron Gas of a GaAs-AlGaAs HeterojunctionPhysical Review Letters, 1986
- Observation of the Nyquist phase-coherence time in thin Au-Pd wiresPhysical Review B, 1986
- Inelastic scattering time in two-dimensional disordered metalsPhysical Review B, 1983
- Spin-Orbit Interaction and Magnetoresistance in the Two Dimensional Random SystemProgress of Theoretical Physics, 1980