Normal incidence photoresponse in GaAs/AlGaAs quantum well infrared photodetector
- 14 August 1995
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 67 (7) , 930-931
- https://doi.org/10.1063/1.114698
Abstract
A normal incidence quantum well infrared photodetector consisting of asymmetric GaAs/AlGaAs quantum wells has been demonstrated. The detector uses electron intersubband transitions between bound to extended states in the step quantum well. The infrared photocurrent spectrum characterized using a glowbar monochromator source shows a photovoltaic response in the configuration of normal incidence. The peak wavelength is 10.3 μm and a detectivity Dλ*=3.7×108 cm √Hz/W was achieved at T=80 K.Keywords
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