Short-Term Annealing in p-Type Silicon
- 1 December 1970
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 17 (6) , 100-104
- https://doi.org/10.1109/tns.1970.4325774
Abstract
A series of experiments was performed to study the effects of acceptor-type, carrier-concentration, and material-growth techniques on the short-term annealing of neutron damage to p-type silicon. No significant dependence of the annealing on these parameters was observed. The parameter most important to the annealing rate is the injected minority-carrier concentration (Δn). The use of extremely low injection concentrations, a very short neutron burst, and early time measurements has resulted in the detection of anneal factors as high as 50 in the tests reported here. No anneal factors of this magnitude have ever been reported before.Keywords
This publication has 2 references indexed in Scilit:
- Injection Dependence of Transient Annealing in Neutron-Irradiated Silicon DevicesIEEE Transactions on Nuclear Science, 1967
- Transient Annealing in Sekiconductor Devices Following Pulsed Neutron IrradiationIEEE Transactions on Nuclear Science, 1966