Safe operating area for bipolar transistors

Publisher Website

1 January 1977

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 40-41
https://doi.org/10.1109/isscc.1977.1155683

Abstract

No abstract available

Keywords

This publication has 3 references indexed in Scilit:

Second breakdown in high-voltage switching transistors
Electronics Letters, 1976
Transistor design and thermal stability
IEEE Transactions on Electron Devices, 1973
Modeling of avalanche effect in integral charge control model
IEEE Transactions on Electron Devices, 1972