All silicon infrared photodiodes: photo response and effects of processing temperature

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Abstract
CMOS compatible infrared waveguide Si photodiodes are made responsive from 1100 to 1750 nm by Si+ implantation and annealing. This article compares diodes fabricated using two annealing temperatures, 300 and 475 °C. 0.25-mm-long diodes annealed to 300 °C have a response to 1539 nm radiation of 0.1 A W-1 at a reverse bias of 5 V and 1.2 A W-1 at 20 V. 3-mm-long diodes processed to 475 °C exhibited two states, L1 and L2, with photo responses of 0.3 ±0.1 A W-1 at 5 V and 0.7 ±0.2 A W-1 at 20 V for the L1 state and 0.5 ±0.2 A W-1 at 5 V and 4 to 20 A W-1 at 20 V for the L2 state. The diodes can be switched between L1 and L2. The bandwidths vary from 10 to 20 GHz. These diodes will generate electrical power from the incident radiation with efficiencies from 4 to 10 %.

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