The influence of the isotopic composition on the thermal expansion of crystalline Si
- 27 June 1994
- journal article
- Published by IOP Publishing in Journal of Physics: Condensed Matter
- Vol. 6 (26) , 4879-4884
- https://doi.org/10.1088/0953-8984/6/26/009
Abstract
We report first-principles calculations of the dependence of the lattice parameter of Si on temperature and on the isotopic composition. Around 80 K (the minimum of the thermal expansion coefficient) the lattice parameter difference of different isotopic compositions is largest and then it decreases monotonically with increasing temperature. The results are explained in a simple physical picture.Keywords
This publication has 14 references indexed in Scilit:
- Effect of isotopic disorder and mass on the electronic and vibronic properties of three-, two- and one-dimensional solidsJournal of Physics: Condensed Matter, 1993
- A determination of the Avogadro ConstantZeitschrift für Physik B Condensed Matter, 1992
- Isotope effect in Ge: a photoluminescence studySolid State Communications, 1992
- Isotope and temperature shifts of direct and indirect band gaps in diamond-type semiconductorsPhysical Review B, 1992
- Isotopic dependence of the lattice constant of diamondPhysical Review B, 1991
- Indirect energy gap ofdiamondPhysical Review Letters, 1990
- Silicon lattice parameters as an absolute scale of length for high precision measurements of fundamental constantsPhysica Status Solidi (a), 1990
- Negative thermal expansion of diamond and zinc-blende semiconductorsPhysical Review Letters, 1989
- Effect of isotope concentration on the lattice parameter of germanium perfect crystalsPhysical Review B, 1988
- ISOTOPE EFFECTS IN THE STRUCTURAL PROPERTIES OF SOLIDSSoviet Physics Uspekhi, 1963