Low temperature molecular beam epitaxial growth of ZnS/GaAs(001) by using elemental sulfur source
- 2 February 1993
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 127 (1-4) , 314-317
- https://doi.org/10.1016/0022-0248(93)90628-a
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Molecular-beam epitaxy of ZnS using an elemental S sourceJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- Low temperature growth of ZnSe/GaAs using hot molecular beamsJournal of Crystal Growth, 1992
- Low Temperature Growth of ZnSe/GaAs Using Post-Heated Molecular BeamsJapanese Journal of Applied Physics, 1991
- Identification of Na acceptor in MOCVD-grown ZnS films and the effect of UV light illuminationJournal of Crystal Growth, 1990
- Homoepitaxial growth of ZnS single crystal thin films by molecular beam epitaxyJournal of Crystal Growth, 1990
- Metalorganic Molecular Beam Epitaxial Growth of ZnSe and ZnS on GaAs Substrates Pretreated with (NH4)2Sx SolutionJapanese Journal of Applied Physics, 1990
- Rheed and x-ray characterization of InGaAs/GaAs grown by MBEJournal of Crystal Growth, 1989
- Excitonic and edge emission in MOCVD-grown epitaxial films and bulk crystal of ZnSJournal of Luminescence, 1988
- Luminescence properties of ZnS/GaAs grown by gas source MBEJournal of Crystal Growth, 1988
- Analysis of reflection high-energy electron-diffraction data from reconstructed semiconductor surfacesPhysical Review B, 1984