Silicon permeable base transistors fabricated by selective epitaxial growth

5 January 1989

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 25 (1) , 14-15
https://doi.org/10.1049/el:19890010

Abstract

A new type of silicon PBT uses lateral selective low-pressure vapour-phase epitaxy to grow ridges with mushroom-like cross-sections leading to self-aligned gate and drain electrodes. Advantages are the lack of any etching damage encountered with etched-groove PBTs and high-temperature process compatibility. First experimental devices with bar widths of 1 –m exhibited transconductances of 7 mS/mm.

Keywords

MICROWAVE PBTS
TRANSCONDUCTANCES
1 MICRON
LATERAL SELECTIVE EPITAXIAL LOW PRESSURE VPE
SELECTIVE EPITAXIAL GROWTH
PBT
SEMICONDUCTORS
EXPERIMENTAL DEVICES
PERMEABLE BASE TRANSISTORS
MUSHROOM-LIKE CROSS-SECTIONS
SELF-ALIGNED GATE
ETCH DAMAGE FREE
BAR WIDTHS
SI TRANSISTORS

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