Current-voltage characteristics of small size MOS transistors

1 March 1972

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 19 (3) , 382-383
https://doi.org/10.1109/t-ed.1972.17428

Abstract

One-dimensional analysis is used to find an upper and lower bound to the drain current of MOS transistors. The drain and source depletion regions and charge carrier velocity saturation are taken into account. These considerations are important in small devices.

Keywords

CHARGE
VOLTAGE
SATURATION
CARRIER
DEPLETION
DRAIN
MOS TRANSISTORS
ACCOUNT
TAKEN