Theoretical Surface Conductivity Changes and Space Charge in Germanium and Silicon
- 1 December 1958
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 29 (12) , 1753-1757
- https://doi.org/10.1063/1.1723040
Abstract
Graphs are presented displaying predicted surface conductivity changes as a function of resistivity for various values of surface potential, and space charge as a function of resistivity for the same range of surface potential, in germanium and silicon. The curves display the trends of the two properties over wide resistivity ranges and are particularly convenient for obtaining theoretical field effect curves. A brief discussion of values for the electrical properties of germanium and silicon is included.This publication has 18 references indexed in Scilit:
- Ionized Impurity Scattering in Nondegenerate SemiconductorsPhysical Review B, 1956
- Physical Theory of Semiconductor SurfacesPhysical Review B, 1955
- Effective Carrier Mobility in Surface-Space Charge LayersPhysical Review B, 1955
- Drift Mobilities in Semiconductors. II. SiliconPhysical Review B, 1954
- Drift Mobilities in Semiconductors. I. GermaniumPhysical Review B, 1953
- -Type Surface Conductivity on-Type GermaniumPhysical Review B, 1953
- The Mobility and Life of Injected Holes and Electrons in GermaniumPhysical Review B, 1951
- Theory of Impurity Scattering in SemiconductorsPhysical Review B, 1950
- Optical Effects in Bulk Silicon and GermaniumPhysical Review B, 1950
- On the Surface States Associated with a Periodic PotentialPhysical Review B, 1939