Extraction of average doping density and junction depth in an ion-implanted deep-depletion transistor

1 May 1980

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 27 (5) , 995-997
https://doi.org/10.1109/t-ed.1980.19971

Abstract

A simple model for extracting the average doping density and the junction depth for an ion-implanted deep-depletion device is presented. Reasonable agreement between theory and experiment is shown.

Keywords

MODEL
AGREEMENT
TRANSISTOR
JUNCTION DEPTH
AVERAGE DOPING DENSITY
EXTRACTION

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