Experimental observations of relaxation oscillator waveforms in GaAs from less than transit-time frequency to several times transit-time frequency

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Abstract
The purpose of this letter is to show that almost all microwave oscillations seen in GaAs, at all frequencies, can be completely accounted for by accumulation layer mode (LSA) operation of the device and therefore only dependent on the current peak-to-valley ratio and the circuit characteristics. The electric field and space charge configurations inside the device must be considered only when they may result in avalanche breakdown. This is true for oscillations even at or below the "transit" frequency.