Influence of substrate temperature and annealing treatments on the properties of glow-discharge and sputtered a-SixC1?x:H films
- 1 June 1991
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine Part B
- Vol. 63 (6) , 1223-1233
- https://doi.org/10.1080/13642819108205555
Abstract
In order to improve our understanding of the role of hydrogen and its influence on the electronic properties of amorphous silicon carbide alloys, we have investigated the optical, electrical and structural properties of films deposited by glow discharge and by sputtering on substrates held at different temperature and after annealing at temperatures in the range 100–400°C.Keywords
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