Stoichiometry of undoped LEC GaAs
- 1 December 1986
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 79 (1-3) , 463-468
- https://doi.org/10.1016/0022-0248(86)90478-1
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Growth condition dependence of EL2 concentrations in magnetic field applied liquid-encapsulated Czochralski GaAs crystalsJournal of Applied Physics, 1986
- Study of 0.8 eV Deep Level Photoluminescence in Undoped LEC Semi-Insulating GaAsJapanese Journal of Applied Physics, 1983
- Stoichiometry-controlled compensation in liquid encapsulated Czochralski GaAsApplied Physics Letters, 1982
- Revised calculation of point defect equilibria and non-stoichiometry in gallium arsenideJournal of Physics and Chemistry of Solids, 1979
- On the atomic weight of galliumJournal of Research of the National Bureau of Standards Section A: Physics and Chemistry, 1977
- Calculations of point defect concentrations and nonstoichiometry in GaAsJournal of Physics and Chemistry of Solids, 1971