Growth mode, strain relief, and segregation of (Ga,In)Sb on GaSb(001) grown by molecular beam epitaxy
- 1 January 1996
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 68 (1) , 31-33
- https://doi.org/10.1063/1.116746
Abstract
We investigate the molecular beam epitaxy of InSb on (001) GaSb by reflection high energy electron diffraction and atomic force microscopy. The growth process is found to follow the Stransky–Krastanov growth scheme with the onset to three-dimensional growth occurring between 1.7 and 2.8 InSb monolayers depending on substrate temperature. The critical thickness is enhanced at low temperature because of a kinetically limited adatom diffusion length and, apparently, at high temperature because of the thermally activated desorption of In. On the basis of these results, the segregation of In during the growth of (Ga,In)Sb is analyzed in situ, yielding a segregation energy of 0.11 eV.Keywords
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