Characterization of III nitride materials and devices by secondary ion mass spectrometry
- 1 January 1998
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 16 (1) , 197-203
- https://doi.org/10.1116/1.589777
Abstract
Secondary ion mass spectrometry (SIMS) is an excellent technique to characterize III nitride materials and devices (dopants, impurities, and composition). Using empirical standards, the ion yield trends are derived for III nitride matrices to enable quantitative and high precision characterization of both major and impurity elements. The technique can be employed to investigate the control of purity and doping, determine growth rate and composition, as well as reveal the structure of finished optoelectronic and electronic devices. SIMS is thus a powerful tool for failure analysis, reverse engineering, and concurrent engineering.Keywords
This publication has 3 references indexed in Scilit:
- SIMS and microelectronicsMaterials Chemistry and Physics, 1994
- Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologiesJournal of Applied Physics, 1994
- Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodesApplied Physics Letters, 1994