The Mobility of Electrons and Holes in HgTe in the Temperature Range of Intrinsic Conduction
- 1 August 1980
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 100 (2) , 379-387
- https://doi.org/10.1002/pssb.2221000202
Abstract
HgTe samples containing no acceptors are studied. The results of the investigation of Hall coefficient and conductivity versus magnetic field up to 20 kG in the temperature range 4 up to 100 K are presented. Concentration and mobility of electrons and holes in the intrinsic range of the conductivity are calculated. Density state effective mass of holes mh = 0.3m0 is determined. It is shown that acoustic and optical phonon scattering are most important modes limiting the hole mobility.Keywords
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