Si/siGe heterojunction bipolar transistor with base doping highly exceeding emitter doping concentration
- 2 February 1989
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 25 (3) , 185-186
- https://doi.org/10.1049/el:19890134
Abstract
A Si/Si0.8Ge0.2 heterojunction bipolar transistor was fabricated having emitter, base and collector contacts at the wafer surface. The base doping concentration amounted to 1019/cm3 which was 20 times the emitter concentration. Due to the pronounced difference in bandgap energy a current gain of 17 was reached.Keywords
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