Effect of substrate preparation on the smoothness of liquid phase epitaxial (AlGa)As on GaP
- 30 September 1974
- journal article
- other
- Published by Elsevier in Journal of Crystal Growth
- Vol. 23 (3) , 233-236
- https://doi.org/10.1016/0022-0248(74)90241-3
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Effects of dislocation density on the properties of liquid phase epitaxial GaAsJournal of Applied Physics, 1974
- High-sensitivity transmission-mode GaAs photocathodeApplied Physics Letters, 1973
- Surface irregularities due to spiral growth in LPE layers of AlGaAs and InGaAsPJournal of Crystal Growth, 1973
- A temperature gradient cell for liquid phase epitaxial growth of GaAsJournal of Crystal Growth, 1972
- An improved GaAs transmission photocathodeJournal of Physics D: Applied Physics, 1972
- Thin solution multiple layer epitaxyJournal of Crystal Growth, 1972
- Photoemission from GaAs-Cs-OJournal of Physics D: Applied Physics, 1968
- Preparation and Properties of Solution-Grown Epitaxial p—n Junctions in GaPJournal of Applied Physics, 1966
- Etching of Dislocations on the Low-Index Faces of GaAsJournal of Applied Physics, 1965