Organic Heterostructure Field-Effect Transistors
- 15 September 1995
- journal article
- other
- Published by American Association for the Advancement of Science (AAAS) in Science
- Vol. 269 (5230) , 1560-1562
- https://doi.org/10.1126/science.269.5230.1560
Abstract
Organic field-effect transistors have been developed that function as either n-channel or p-channel devices, depending on the gate bias. The two active materials are α-hexathienylene (α-6T) and C 60 . The characteristics of these devices depend mainly on the molecular orbital energy levels and transport properties of α-6T and C 60 . The observed effects are not unique to the two materials chosen and can be quite universal provided certain conditions are met. The device can be used as a building block to form low-cost, low-power complementary integrated circuits.Keywords
This publication has 9 references indexed in Scilit:
- An analytical model for short-channel organic thin-film transistorsJournal of Applied Physics, 1995
- C60 thin film transistorsApplied Physics Letters, 1995
- Organic Transistors: Two-Dimensional Transport and Improved Electrical CharacteristicsScience, 1995
- Interfacial reaction ofwith silverPhysical Review B, 1994
- All-Polymer Field-Effect Transistor Realized by Printing TechniquesScience, 1994
- Novel structure of organic electroluminescence cells with conjugated oligomersApplied Physics Letters, 1993
- Fullerene Field-Effect TransistorsPublished by Springer Nature ,1993
- bonding and energy-level alignment on metal and semiconductor surfacesPhysical Review B, 1991
- An all‐organic "soft" thin film transistor with very high carrier mobilityAdvanced Materials, 1990