Investigations on deep traps in GaAs and (Al Ga1−)As bulk layers grown by metalorganic vapour-phase epitaxy using the new alternative arsenic precursor diethyl-tert-butylarsin
- 1 January 1995
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 146 (1-4) , 521-526
- https://doi.org/10.1016/0022-0248(94)00574-5
Abstract
No abstract availableKeywords
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