Dynamic characteristics of dislocations in indium-doped gallium arsenide crystal
- 3 February 1986
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 48 (5) , 326-328
- https://doi.org/10.1063/1.96541
Abstract
Characteristics in the motion of dislocations generated from scratches in GaAs doped with In at a concentration of 2×1020 atoms/cm3 are investigated and are compared with those in undoped GaAs. α dislocations in In‐doped GaAs are found to be immovable under stress lower than 10 MPa in the temperature range 350–750 °C. Such immovability under low stress is not found for β dislocations in In‐doped GaAs and for both α and β dislocations in undoped GaAs.Keywords
This publication has 9 references indexed in Scilit:
- Crystal growth of completely dislocation-free and striation-free GaAsJournal of Crystal Growth, 1985
- Metal—insulator transition in doped siliconPhilosophical Magazine Part B, 1983
- In situX-ray topographic study of the dislocation mobility in high-purity and impurity-doped silicon crystalsPhilosophical Magazine A, 1983
- Dislocation-free GaAs and InP crystals by isoelectronic dopingJournal of Crystal Growth, 1983
- Creep and dislocation velocities in gallium arsenidePhysica Status Solidi (a), 1978
- Impurity effect on grown-in dislocation density of InP and GaAs crystalsJournal of Applied Physics, 1978
- Dislocation Velocities in GaAsJapanese Journal of Applied Physics, 1977
- Dislocation velocities in indium antimonidePhysica Status Solidi (a), 1975
- Dislocation Etch Pits in GaAsJournal of Applied Physics, 1964