Two-dimensional impurity profiling near the mask edge using anodisation

4 July 1985

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 21 (14) , 587-588
https://doi.org/10.1049/el:19850414

Abstract

An experimental scheme for measuring the two-dimensional impurity profile near the mask edge is described, based on forming a U-groove in silicon by anisotropic etching leaving only the sidewall resistors. 2-D impurity profiling of the sidewall resistor is achieved by constant-voltage anodisation and etching the resultant oxide. An n × m resistor array structure for simultaneously obtaining the 2-D impurity profile is also described.

Keywords

SIDEWALL RESISTORS
SIDE-WALL RESISTOR
OXIDE ETCHING
ANISOTROPIC ETCHING
ANODISATION
SUBMICRON MOSFETS
N× M RESISTOR ARRAY STRUCTURE
CONSTANT-VOLTAGE ANODISATION
2-D IMPURITY PROFILING
DOPING PROFILING
EXPERIMENTAL SCHEME
MASK EDGE
U-GROOVE IN SC

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