Charge collection and SEU sensitivity for Ga/As bipolar devices
- 1 December 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 36 (6) , 2300-2304
- https://doi.org/10.1109/23.45439
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Charge collection in HI/sup 2/L bipolar transistorsIEEE Transactions on Nuclear Science, 1988
- Intrinsic SEU Reduction from Use of Heterojunctions in Gallium Arsenide Bipolar CircuitsIEEE Transactions on Nuclear Science, 1987
- The Variability of Single Event Upset Rates in the Natural EnvironmentIEEE Transactions on Nuclear Science, 1983
- Cosmic-Ray-Induced Errors in MOS DevicesIEEE Transactions on Nuclear Science, 1980