Carrier energy relaxation in In0.53Ga0.47As determined from picosecond luminescence studies
- 15 August 1984
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 45 (4) , 401-403
- https://doi.org/10.1063/1.95235
Abstract
We have measured the first infrared luminescence spectra of In0.53Ga0.47As with 10‐ps time resolution. From the spectra we have obtained the carrier distribution functions at various delays for two different initial plasma densities. Our results provide a direct measurement of the carrier energy loss rate to the lattice, which we find to be about an order of magnitude slower than predicted from a simple model. We also find that the energy loss rate is surprisingly insensitive to carrier density at high densities.Keywords
This publication has 16 references indexed in Scilit:
- Picosecond dynamics of hot carrier relaxation in highly excited multi-quantum well structuresSolid State Communications, 1983
- Picosecond carrier dynamics and laser action in optically pumped buried heterostructure lasersApplied Physics Letters, 1982
- Picosecond measurement of spontaneous and stimulated emission from injection lasersApplied Physics Letters, 1982
- Slowed picosecond kinetics of hot photogenerated carriers in GaAsSolid State Communications, 1982
- Picosecond luminescence spectroscopy of electron-hole plasmas and excitons in GaAsJournal of Luminescence, 1981
- Cooling of hot electron-hole plasmas in the presence of screened electron-phonon interactionsSolid State Communications, 1981
- Luminescence of High Density Electron-Hole Plasma in GaAsJournal of the Physics Society Japan, 1980
- Dynamics of hot carrier cooling in photo-excited GaAsSolid State Communications, 1979
- Thermalization of the Electron—Hole Plasma in GaAs.Physica Status Solidi (b), 1978
- Time-resolved luminescence spectra in highly photo-excited CdSe at 1.8KSolid State Communications, 1978