Chemical reaction and anion trapping at the Yb/GaAs(110) interface

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Abstract
Synchrotron radiation photoelectron spectroscopy was used to study the interface between the rare earth metal ytterbium, and the GaAs(110) cleaved surface. From trends in line shape and intensity of the Ga 3d, As 3d, and Yb 4 f core level signals, we have deduced a picture of the formation and the final structure of the interface at room temperature. For metal coverages up to 1 ML, there is a weak chemical interaction between deposited metal and substrate. The coverage range between 1 and 2 ML is marked by strong interdiffusion and reaction, and the formation of an Yb arsenidelike phase at the surface that is stable with further metal deposition. This reacted layer appears to restrict further interdiffusion; the As is trapped at the interface, and additional metal deposition results in the growth of an Yb metal rich overlayer. From the continuous shift of the Ga 3d signal with coverage, and the behavior of the Yb 4 f line shape, the overlayer appears to be an Yb/Ga alloy that becomes more dilute in Ga as Yb is deposited.

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