Heteroepitaxial Growth of GaN1-xPx (x≲0.09) on Sapphire Substrates
- 1 December 1992
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 31 (12R)
- https://doi.org/10.1143/jjap.31.3791
Abstract
Gallium nitride phosphide single crystals having the maximum composition of x∼0.09 were epitaxially deposited on (0001) sapphire substrates. The growth was carried out by the vapor phase reaction of the Ga-Br2-PH3-NH3-N2 system. The above maximum composition was attained at a substrate temperature of 980°C.Keywords
This publication has 1 reference indexed in Scilit:
- Heteroepitaxial Growth of GaN1-xPx(x\lesssim0.06) on Sapphire SubstratesJapanese Journal of Applied Physics, 1988