High performance 0.1µm gate-length planar-doped HEMTs

• 1 January 1987
• proceedings article
• Published by Institute of Electrical and Electronics Engineers (IEEE)
• p. 410-413
• https://doi.org/10.1109/iedm.1987.191445

Abstract

Keywords

• HEMTS
• GATE LENGTH
• PLANAR DOPED
• HIGH PERFORMANCE
• PERFORMANCE 0.1ΜM GATE