Influence of source-drain series resistance on MOSFET field-effect mobility
- 23 May 1985
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 21 (11) , 457-458
- https://doi.org/10.1049/el:19850324
Abstract
A simple but general model for explaining the series resistance dependence of transconductance and field-effect mobility is developed in the letter. This model, which enables a quantitative analysis of series resistance effects on the maximum mobility and the corresponding gate voltage, has been successfully tested on short-channel MOSFETs with various channel lengths and external series resistances.Keywords
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