The Effect of Ge Segregation on Oxidation of Si
- 1 January 1987
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
We have studied oxidation of various Si samples including: Ge implanted Si, CVD and MBE grown Si(0.4–4% Ge) alloys, and MBE grown Si-Si(Ge) superlattices. The samples were oxidized in pyrogenic steam (800–1000°C, atmospheric pressure) and at low temperature and high pressure (740°C, 205 atm of dry O2). The oxidized samples were analyzed with RBS/channeling and ellipsometry.An enhanced oxidation rate was seen for all Ge doped samples, compared with rates for pure Si. The magnitude of the enhancement increased with decreasing oxidation temperature. For steam oxidations the Ge was segregated from the oxide and formed an epitaxial layer at the Si-SiO2 interface; the quality of the epitaxy was highest for the highest oxidation temperatures. For high pressure oxidation the Ge was trapped in the oxide and the greatest enhancement in oxidation rate (>100%) was observed.Keywords
This publication has 3 references indexed in Scilit:
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- Novel oxidation process in Ge+-implanted Si and its effect on oxidation kineticsApplied Physics Letters, 1987
- Redistribution of arsenic in silicon during high pressure thermal oxidationApplied Physics Letters, 1987