High temperature characteristic T 0 and low threshold current density of1.3 µm InAsP/InGaP/InP compensated strain multiquantum wellstructure lasers
- 11 May 1995
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 31 (10) , 803-805
- https://doi.org/10.1049/el:19950567
Abstract
A high device quality material consisting of 10 compensated strained quantum well InAsP/InGaP structures was grown by MOCVD at atmospheric pressure. The estimated threshold current density for an infinite cavity length was 130 A/cm2 per well. A high characteristic temperature of 117 K was obtained. To the authors' knowledge, this is the highest value for as-cleaved lasers at 1.3 µm on InP substrates.Keywords
This publication has 2 references indexed in Scilit:
- MOVPE growth of strained InAsP/InGaAsP quantum-well structures for low-threshold 1.3-μm lasersIEEE Journal of Quantum Electronics, 1994
- Strained quaternary quantum well lasers for high temperature operationApplied Physics Letters, 1993