Electrical profiles from zinc implanted GaAs

5 January 1978

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 14 (1) , 2-4
https://doi.org/10.1049/el:19780002

Abstract

Hole concentration and mobility profiles have been measured for 10¹⁵Zn⁺/cm² implanted into GaAs at room temperature. After annealing at 800°C the peak hole concentration for a 60 keV implant was in excess of 10¹⁹ holes/cm³ and decreased with increasing energy up to 450 KeV.

Keywords

GAAS
ROOM TEMPERATURE
ZN IMPLANTED
HOLE CONCENTRATION
MOBILITY PROFILES
ANNEALING

This publication has 1 reference indexed in Scilit:

Ion Implantations of Mg and Zn into n-Type GaP
Published by Springer Nature ,1975