The formation of channelling patterns on the surface of ion bombarded silicon
- 1 October 1966
- journal article
- Published by Elsevier in Physics Letters
- Vol. 23 (1) , 18-19
- https://doi.org/10.1016/0031-9163(66)90234-4
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Conversion of crystalline germanium to amorphous germanium by ion bombardmentPhilosophical Magazine, 1965
- The penetration of energetic ions through the open channels in a crystal latticePhilosophical Magazine, 1963
- Super ranges of fast ions in copper single crystalsPhysics Letters, 1963
- Experimental Evidence for the Increase of Heavy Ion Ranges by Channeling in Crystalline StructurePhysical Review Letters, 1963
- THE CHANNELING OF ENERGETIC ATOMS IN CRYSTAL LATTICESApplied Physics Letters, 1963
- Damage to Silicon Produced by Bombardment with Helium IonsJournal of Applied Physics, 1957