Electronic and structural properties of a discommensurate monolayer system: GaAs(110)-(1×1)Bi
- 15 June 1989
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 39 (17) , 12925-12928
- https://doi.org/10.1103/physrevb.39.12925
Abstract
We report the structural and electronic properties of a new ordered Bi(1×1) overlayer on cleaved GaAs(110) surfaces. Although some structural similarities exist between the ordered Bi monolayer and that for Sb, our studies show the following novel features: a periodic one-dimensional array of misfit dislocations, which appear to generate acceptor states that ‘‘pin’’ the Fermi level on n-type GaAs, and Bi-derived valence and conduction bands that extend into the GaAs band gap and are separated by 0.7 eV.Keywords
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