Electric field enhancement of escape probability on negative-electron-affinity surfaces
- 1 August 1973
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 23 (3) , 123-124
- https://doi.org/10.1063/1.1654828
Abstract
Electric field enhancement of photoemission from negative‐electron‐affinity surfaces on silicon and GaAs has been studied. It is shown that the electric field increases the escape probability and does not change the spectral response of negative‐electron‐affinity surfaces. The results are explained by assuming a simple surface potential barrier together with work function lowering by the Schottky effect.Keywords
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