Anomalous enhancement of substrate terminal current beyond pinch-off in silicon n-channel MOS transistors and its related phenomena
- 1 January 1968
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE
- Vol. 56 (11) , 2088-2090
- https://doi.org/10.1109/PROC.1968.6810
Abstract
Anomalous enhancement of substrate terminal current is observed in n-channel silicon MOS transistors beyond pinch-off, but not in p-channel devices. This phenomenon is interpreted as the hole current flow caused by the impact ionization of trapped electrons in Si-SiO2interface states and of valenced electrons at the pinched-off channel of the silicon surface.Keywords
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