Switching Characteristics of InGaAs/InP Multiquantum Well Voltage-Controlled Bistable Laser Diodes
- 1 December 1990
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 29 (12A) , L2442
- https://doi.org/10.1143/jjap.29.l2442
Abstract
Voltage-controlled optical bistability in In0.53Ga0.47As/InP multiquantum well (MQW) laser diodes is demonstrated for the first time by using the quantum confined Stark effect (QCSE) and saturable absorption of a two-dimensional exciton. Optical bistability is obtained in a wide range of control voltages from +0.7 V to -0.6 V. Switching operation is achieved by injecting a set light pulse and applying reverse bias reset voltage to the saturable absorption region. Turn-on time is 300 ps with input light of 6 mW, and turn-off time of 260 ps is obtained by reducing the stray capacitance in the saturable absorption region.Keywords
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