Suppression of antiphase domains in the growth of GaAs on Ge(100) by molecular beam epitaxy
- 1 February 1987
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 81 (1-4) , 214-220
- https://doi.org/10.1016/0022-0248(87)90393-9
Abstract
No abstract availableKeywords
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