Thin Silicon Dioxide Using the Rapid Thermal Oxidation (RTO) Process for Trench Capacitors

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Abstract
Growth and electrical characteristics of thin silicon dioxide using the rapid thermal oxidation (RTO) process have been studied for planar and trench capacitors. Growth of silicon dioxide follows the linear‐parabolic model. The activation energies of the linear rate constant and the parabolic rate constant B are found to be 1.98 and 1.42 eV, respectively. Good electrical characteristics can be achieved by increasing the oxidation temperature from 1000° to 1150°C. For the trench capacitors oxidized at 1150°C, it is found that oxide breakdown occurs dominantly at the fields , the leakage current density is and the interface‐state density is . The RTO process is proved to be a promising technique for the fabrication of trench capacitors.

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