Study on electrical and photoelectrical behaviour of undoped and doped furazano[3,4-b]piperazine (FP) thin-film devices
- 30 December 1995
- journal article
- Published by Elsevier in Synthetic Metals
- Vol. 75 (3) , 201-207
- https://doi.org/10.1016/0379-6779(96)80009-9
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Metal-insulator-semiconductor Schottky-type diodes of doped thiophene oligomersSynthetic Metals, 1994
- Efficient light-emitting diodes based on polymers with high electron affinitiesNature, 1993
- Electrical and Photovoltaic Properties of Tetrapyrydilporphyrin Sandwich CellsPhysica Status Solidi (a), 1993
- Investigations of materials and device structures for organic semiconductor solar cellsOptical Engineering, 1993
- Photovoltaic properties of iodine-doped magnesium tetraphenylporphyrin sandwich cells. II. Properties of illuminated cellsJournal of Applied Physics, 1991
- An all‐organic "soft" thin film transistor with very high carrier mobilityAdvanced Materials, 1990
- The oligothiophene-based field-effect transistor: How it works and how to improve itJournal of Applied Physics, 1990
- Metal-polymer Schottky barriers on processible polymersSynthetic Metals, 1989
- New semiconductor device physics in polymer diodes and transistorsNature, 1988
- Organic electroluminescent diodesApplied Physics Letters, 1987