1.8 GHz class E power amplifier for wireless communications
- 26 September 1996
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 32 (20) , 1846-1848
- https://doi.org/10.1049/el:19961262
Abstract
The authors present a 1.8 GHz class E power amplifier for wireless communications. A fully integrated class E power amplifier module was designed, fabricated and tested. The circuit was implemented in a self-aligned-gate, depletion mode 0.8 µm GaAs MESFET process. The amplifier delivers 23 dBm of power to the 50 Ω load, with a power added efficiency of 57% at a supply voltage of 2.4 V.Keywords
This publication has 3 references indexed in Scilit:
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- Class E Power Amplifiers and Frequency Multipliers with finite DC-Feed InductanceIEEE Transactions on Circuits and Systems, 1987
- GaAs FET device and circuit simulation in SPICEIEEE Transactions on Electron Devices, 1987