Monolithic HgCdTe MIS IR detectors with a floating-diode sense mechanism

1 October 1986

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 33 (10) , 1494-1501
https://doi.org/10.1109/t-ed.1986.22699

Abstract

Monolithic charge-transfer devices for use as electronic focal planes in infrared imaging systems have been tested under varying conditions to assess their operating limitations. These devices employ the charge imaging matrix [1] concept (CIM), which uses the potential change on a floating diode for charge detection. Unlike a charge injection device, the CIM READ operation does not involve the recombination of charge carriers. Charge is integrated in a metal-insulator-semiconductor well and then transferred to the sense diode. This allows for very fast READ operations and potentially high (2 MHz) data rates. The responsivity, charge transfer, crosstalk, uniformity, and noise characteristics have been evaluated using small arrays of up to 9 × 8 pixels having diode areas formed by ion implantation with boron. HgCdTe with optical cutoff wavelengths from 9 to 9.5 µm were used, and tests were conducted at liquid-nitrogen temperature.

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