Raman-scattering study of ion-implantation-produced damage inO
- 1 July 1975
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 12 (1) , 20-25
- https://doi.org/10.1103/physrevb.12.20
Abstract
We present a Raman-scattering study of damage in O which we have implanted with 90- and 180-keV Cd ions with doses ranging from 1.5 to 1.5× . The Raman scattering was performed prior to annealing in order to study primarily the implantation-produced lattice damage. Using two argon-laser lines close to resonance with the blue exciton, we observe changes from the pure-crystal Raman spectrum at all implantation doses. The unusual sensitivity of the technique can be interpreted in terms of damage-induced broadening of the intrinsic exciton states.
Keywords
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