Position of the Band Edges of Silicon under Uniaxial Stress
- 1 June 1972
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 20 (11) , 420-422
- https://doi.org/10.1063/1.1654000
Abstract
Schottky barrier heights of metal‐silicon contacts have been measured as a function of temperature at high uniaxial 〈111〉 stress (100 kbar). The change in band gap, as compared to the zero‐pressure band gap, can be attributed to a change in position of the conduction band edge alone, i.e., a change in electron affinity.Keywords
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