Photoluminescence Spectroscopy Of Thin Indium-Tin-Oxide Contacts On Mercuric Iodide Substrates

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Abstract
Mercuric iodide (HgI2) photodetectors with sputtered indium-tin-oxide (ITO) entrance electodes were studied using low-temperature photoluminesence spectroscopy. The photoluminescence spectra obtained on each photodetector was found to differ for points beneath the ITO contact and points adjacent to it, indicating that the contact fabrication process introduces new carrier traps and radiative recombination centers within the ITO-HgI2 interfacial region. In particular, a new broad band was observed in the spectra taken from points beneath the ITO electrode. Photo-current-versus-position measurements showed that the intensity of this broad band was enhanced in regions having relatively poor photoresponse. Specimens of HgI2 with evaporated semi-transparent tin and indium films were also investigated. The spectra obtained from points beneath the Sn and In films suggest that the regions having poor photoresponse in the ITO-contacted photodetector contain either free tin or indium metal.

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