Role of hydrogen in doping of GaN

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Abstract
We investigate the interactions between hydrogen and dopant impurities in GaN, using state‐of‐the‐art first‐principles calculations. Our results for energetics and migration reveal a fundamental difference in the behavior of hydrogen between p‐type and n‐type material; in particular, we explain why hydrogen concentrations in n‐type GaN are low, and why hydrogen has a beneficial effect on acceptor incorporation in p‐type GaN. Our results identify the conditions under which hydrogen can be used to control doping in semiconductors in general.

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