Determination of the Peltier coefficient from current induced growth layers: InSb/melt
- 1 March 1984
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 66 (2) , 289-298
- https://doi.org/10.1016/0022-0248(84)90211-2
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Application of a Heat Pipe to Czochralski Growth: Part I : Growth and Segregation Behavior of Ga‐Doped GeJournal of the Electrochemical Society, 1979
- The direction of growth of the surface of a crystal in contact with its meltJournal of Crystal Growth, 1975
- Modulation of Dopant Segregation by Electric Currents in Czochralski-Type Crystal GrowthJournal of the Electrochemical Society, 1971
- Indium antimonide—A review of its preparation, properties and device applicationsSolid-State Electronics, 1962
- The Use of Thermoelectric Effects during Crystal GrowthJournal of the Electrochemical Society, 1961
- InAs and InSb as Thermoelectric MaterialsJournal of Applied Physics, 1959
- Transport of electrons in intrinsic InSbJournal of Physics and Chemistry of Solids, 1959
- Peltier Heat at the Interface between a Metal and Its MeltJournal of Applied Physics, 1958