Laser doping of silicon role of the surface status in the incorporation mechanism
- 1 January 1989
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 36 (1-4) , 394-399
- https://doi.org/10.1016/0169-4332(89)90934-3
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Surface doping of semiconductors by pulsed-laser irradiation in reactive atmosphereApplied Physics A, 1988
- Numerical simulation of the gas immersion laser doping (GILD) process in siliconIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1988
- ArF excimer laser doping of boron into siliconJournal of Applied Physics, 1987