Tunneling in all-high-edge junctions with deposited barriers
- 1 December 1992
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 46 (22) , 14830-14833
- https://doi.org/10.1103/physrevb.46.14830
Abstract
All-high--material edge junctions consisting of laser-ablated Y-Ba-Cu-O electrodes and an in situ rf-sputter-deposited MgO barrier have been fabricated whose I-V characteristics show tunneling-related effects. These include a junction resistance with an exponential dependence on the nominal-barrier thickness, gaplike structure observed in the conductance curves, and Josephson effects. These properties are very sensitive to the choice of materials-processsing method for the junction interfaces.
Keywords
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